Vertical cavity semiconductor optical amplifiers ieee xplore. Design and analysis of verticalcavity semiconductor optical amplifiers abstract. Dfb or distributed bragg reflector dbr reflectors, external gratings, or by vertical cavity lasing 31. The verticalcavity design gives vcsoas a number of advantages over inplane devices, such as high coupling efficiency to. This assumption is not true in practice, and it is found that vcsoas possess a dominant linear.
Reflective optical bistability and nonlinear switching in. Deri this paper was prepared for submittal to the integrated photonics research conference. This feature, added to the low manufacturing costs of vcsoas and the ease to. Amplification with 12 ghz bandwidth was obtained at 12. Design and analysis of verticalcavity semiconductor optical amplifiers. Wavelength selection in mems tunable verticalcavity soas.
When using a vcsoa, the input power needed for the appearance of optical bistabihty is one order of magnitude lower than that needed in edgeemitting devices. A semiconductor optical amplifier is an optical amplifier based on a semiconductor gain medium. However, the coherence preservation quality of a vcsoa depends strongly on the bias condition, resonant wavelength mismatch, and the optical input power level. Index termssemiconductor optical amplifier, soa, vcsel, verticalcavityamplifier. The characteristics of optical bistability in a vertical\ud cavity semiconductor optical amplifier vcsoa operated in\ud reflection are reported. Optical bistability in a verticalcavity semiconductor optical amplifier vcsoa. Read verticalcavity semiconductor optical amplifiers vcsoas as optical sensing elements, proceedings of spie on deepdyve, the largest online rental service for scholarly research with thousands of academic publications available at your fingertips. Nonlinear gain in verticalcavity semiconductor optical.
The semiconductor optical amplifier soa is a versatile candidate. The amplifier is also an 850nm verticalcavity semiconductor optical amplifier, which is composed of two higlectivity distributed bragg reflector dbr mirrors to form a high finesse fabryperot cavity. Citeseerx document details isaac councill, lee giles, pradeep teregowda. The research proved the vertical cavity semiconductor optical amplifier vcsoa have its inherent advantage over inplane soa, including high nonlinearity, low power consumption, and a compact. Martinpereda senior, member, ieee abstractthe characteristic o opticaf bistabilitl in a versy ticalcavity semiconducto opticar amplifiel vcsoar operate d in. In the past few years verticalcavity semiconductor optical amplifiers vcsoas have drawn increasing research attention. The dependences of the optical bistability in vcsoas on the initial phase detuning and on the applied bias current are analyzed. Additionally, these amplifiers are rarely tunable, and when they are, they are not tunable over a large range making it necessary to use multiple amplifiers further increasing costs.
It is often assumed that the polarization states of a vcsoa are degenerate because of the circular geometry of the device. Vertical cavity semiconductor optical amplifiers vcsoas has good coupling efficiency to optical fiber, compact design, polarization independent gain and are. As in previous analyses for fabryperot and dfb soas, the variations of these parameters and their possible application for optical sensing are reported in this paper for the case of the verticalcavity semiconductor optical amplifier vcsoa. This dissertation mainly focuses on two closelyrelated research topics about vertical cavity semiconductor optical amplifiers vcsoas. Cavity solitons in an opticallypumped verticalcavity. Long wavelength verticalcavity semiconductor optical amplifiers. Nonlinear behavior and applications of vertical cavity. Vertical cavity semiconductor optical amplifier vcsoa, optical bistabihty, optical sensing 1. Summary the wavelength tuning characteristics of a microelectromechanical tunable verticalcavity semiconductor optical amplifier have been investigated. We report on the wavelengthdependent nonlineargain properties of a vertical cavity semiconductor optical amplifier. The verticalcavity design also allows for on wafer testing and fabricating of twodimensional arrays on wafer.
These devices can be designed to be used as vertical cavity surface emitting laser or, as in this study, as a vertical cavity semiconductor optical amplifier vcsoa. Cavity semiconductor optical amplifier vcsoa based on gainnas for 1. A novel vertical cavity semiconductor optical amplifier monolithically integrated with the photodetector has been developed. Since the device substrate is not transparent at 850nm. Bistability characteristics of different types of optical. The characteristics of optical bistability of different types of optical modes amplified by smallsize quantum dot vertical cavity semiconductor optical amplifiers have been investigated. Long wavelength verticalcavity semiconductor optical. Request pdf noise figure of verticalcavity semiconductor optical amplifiers the noise figure of verticalcavity semiconductor optical amplifiers vcsoas is. Modeling reflectiv bistabilite y in verticalcavity.
Bowers, noise figure of verticalcavity semiconductor. We report on the wavelengthdependent nonlineargain properties of a verticalcavity semiconductor optical amplifier. Design and analysis of verticalcavity semiconductor. Optical amplifiers, ieee journal of quantum electronics, vol. Polarization anisotropy in verticalcavity semiconductor. Simple formulas for the gainbandwidth product are derived. Under continuouswave optical pumping in a singlemode fibre coupled format, gain figures of up to 17. The characteristics of optical bistability in quantum dot vertical cavity semiconductor optical amplifier integrated with mems membrane have been investigated, and a closedform model is derived taking into account the effect of the quantum dot. The polarizationdependent gain pdg characteristics of a verticalcavity semiconductor optical amplifier vcsoa are measured, and the case of the pdg is determined.
Optical bistability in a verticalcavity semiconductor. Optical properties of metallic films for verticalcavity optoelectronic devices aleksandar d. Contrast ratio and hysteresis width of optical bistability. Large hysteresis width is obtained for te 01 mode injected to small radius amplifier due to stronger intensitydependent nonlinear refractive index and. A steplike output versus input transfer curve and bistability are found on.
Ucrl jc122859 preprint a gainclamped, crosstalk free, vertical cavity lasing, semiconductor optical amplifier for wem applications j. Esener a aelectrical and computer engineering dept. An alternative to the conventional inplane soas are verticalcavity semiconductor optical amplifiers vcsoas. Design and analysis of vertical cavity semiconductor optical amplifiers. Abstractthe authors present detailed, yet largely analytical, models for gain, optical bandwidth, and saturation power of vertical cavity semiconductor optical amplifiers vcsoas in reflection and transmission mode. Pdf design and analysis of verticalcavity semiconductor. This paper discusses the effect of slowlight in vertical cavity semiconductor optical amplifiers. Pdf observation of bistability in a verticalcavity.
Gainnas and gaas, tophat verticalcavity semiconductor. Vertical cavity semiconductor optical amplifiers vcsoas structures are based on fabry perot fp method to design optical gain and bandwidth gain to be. One is theoretical study, modeling, and characterization of the nonlinear gain characteristics of vcsoas due to the dependence of nonlinear refractive index on carrier concentration in its fabryperot fp cavity. The reflectivity of the vcsoa top mirror was varied in the characterization of the device. Optical properties of metallic films for verticalcavity. Optical design of dilute nitride quantum wells vertical cavity semiconductor optical amplifiers for communication systems. The verticalcavity design gives vcsoas a number of advantages over inplane devices, such as high coupling efficiency to optical fiber, small form factor, low power consumption, and the possibility of fabricating twodimensional arrays on. Gainclamped, crosstalk free, vertical cavity lasing. With the progress of optical transmission technology, various kinds of semiconductor lasers have been developed for the application to wavelength division multiplexing, high speed, low power consumption, and photonic integration. Modeling reflective bistability in verticalcavity\ud. An experimental study of a broadarea verticalcavity semiconductor optical amplifier in the 980 nm wavelength range is reported. This is believed to be the first monolithic vcsoa operating at 1. Optical bistability in verticalcavity semiconductor optical amplifiers. Pdf nonlinear gain in verticalcavity semiconductor.
Verticalcavity semiconductor optical amplifiers vcsoas are interesting devices because of their small form factor, potential low manufacturing cost, high. Noise in verticalcavity semiconductor optical amplifiers. Semiconductor verticalcavity surfaceemitting lasers vcsels with wavelengths from 491. Analysis of pulse amplification characteristics in vertical cavity. Request pdf design and analysis of verticalcavity semiconductor optical amplifiers the authors present detailed, yet largely analytical, models for gain. Abstract we present a novel verticalcavity semiconductor optical amplifier vcsoa based on gainnas for 1. Includes the establishment of the spontaneous radiation of vertical cavity semiconductor optical amplifier vcsoa bistable model, numerical analysis and comparison of vcsoa and traditional soa bistable characteristics of amplified spontaneous emission ase sensitivity.
Longwavelength verticalcavity semiconductor optical amplifiers vcsoas are used in fiberoptic communication systems as an alternative due to their lowcosts. This is very similar to a vertical cavity surfaceemitting laser. Coherence optimization of vertical cavity semiconductor. Semiconductor optical amplifiers soas are an attractive. Pdf optical bistability in verticalcavity semiconductor. Semiconductor optical amplifiers in optical communication. Semiconductor optical amplifiers are optical amplifiers based on semiconductor gain media. Vertical cavity semiconductor optical amplifiers vcsoas are attractive devices for use in coherent optical amplification, especially where 2d amplifier arrays are required. Introduction usually, in optical sensors, the variation of the optical intensity of a signal gives the information about changes of the. The experimental result shows that an optical gain of 2.
A novel technique for designing high power semiconductor. Vcsoas are interesting devices because of their small form factor, potential low manufacturing cost. Hot electron light emission and lasing in semiconductor heterostructure hellish devices are surface emitters the operation of which is based on the longitudinal injection of electrons and holes in the active region. This study investigates the prospects for a hellish vcsoa based on gainnasgaas material for operation in the 1. The lasing threshold current of the vcsoa was about 5. Verticalcavity semiconductor optical amplifiers vcsoas. These include logic, amplification, switching, while both qw and qd gain structures have been studied 18, 19. Majewski we present models for the optical functions of 11 metals used as mirrors and contacts in optoelectronic. Verticalcavity semiconductor optical amplifiers vcsoas are interesting devices due to their insensitivity to polarization of the signal light and high coupling efficiency to optical fiber. The saturation output power of the device is therefore increased fig. A gainnasgaas vertical cavity semiconductor optical amplifier vcsoa is reported. We report experimental measurements of optical bistability ob and nonlinear switching in a 1550 nmverticalcavity semiconductor optical amplifier vcsoa operated in reflection and biased below and above its threshold current.
Slow light in quantum dot vertical cavity semiconductor. A fabryperot model is used to predict the group delay gd and gdbandwidth performance of a. Longwavelength verticalcavity semiconductor optical. Optical design of dilute nitride quantum wells vertical.
Electrostatic deflection of the membrane dbr structure has resulted in tunable amplification over an 11nm wavelength range 15801569 nm, with a. Vertical cavity semiconductor optical amplifiers vcsoas are costeffective structures that satisfy these requirements and at the same time provide a platform for the realization of various functionalities. Carrierconfined verticalcavity semiconductor optical amplifiers for. We present the first demonstration of a microelectromechanical tunable verticalcavity semiconductor optical amplifier. Osa a vertical cavity semiconductor optical amplifier. Observation of bistability in a vertical cavity semiconductor optical amplifier vcsoa. Longwavelength verticalcavity semiconductor optical amplifiers. Modeling reflectiv bistabilite y in verticalcavity semiconductor optica amplifierl s a. Modeling of wavelength conversion using switching bistability in a vertical cavity semiconductor saturable absorber. The authors present detailed, yet largely analytical, models for gain, optical bandwidth, and saturation power of verticalcavity semiconductor optical amplifiers vcsoas in reflection and transmission mode. Abstractverticalcavity semiconductor optical amplifiers. Design and analysis of mems tunable verticalcavity semiconductor optical amplifiers garrett d.